2N3713
2N3714
2N3715
2N3716
SILICON
NPN TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3713, 2N3714,
2N3715, and 2N3716 are silicon NPN power transistors
manufactured by the epitaxial-base process, mounted
in a hermetically sealed metal package designed for
medium speed switching and amplifier applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
SYMBOL
VCBO
VCEO
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
2N3713
2N3715
80
60
80
V
10
A
IB
PD
4.0
A
150
W
-65 to +200
°C
1.17
°C/W
CHARACTERISTICS: (TC=25°C unless otherwise noted)
TEST CONDITIONS
MIN
TYP
VCE=Rated VCBO, VBE=1.5V
VCE=Rated VCEO, VBE=1.5V, TC=150°C
IEBO
BVCEO
BVCEO
VEB=7.0V
IC=200mA (2N3713, 2N3715)
VBE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
fT
tr
ts
tf
V
7.0
ELECTRICAL
SYMBOL
ICEV
ICEV
VCE(SAT)
VCE(SAT)
UNITS
V
VEBO
IC
TJ, Tstg
JC
IC=200mA (2N3714, 2N3716)
IC=5.0A, IB=0.5A (2N3713, 2N3714)
2N3714
2N3716
100
MAX
1.0
UNITS
mA
10
mA
5.0
mA
60
V
80
V
1.0
V
IC=5.0A, IB=0.5A (2N3715, 2N3716)
IC=5.0A, IB=0.5A (2N3713, 2N3714)
0.8
V
2.0
V
IC=5.0A, IB=0.5A (2N3715, 2N3716)
VCE=2.0V, IC=3.0A
1.5
V
1.5
V
VCE=2.0V, IC=1.0A (2N3713, 2N3714)
VCE=2.0V, IC=1.0A (2N3715, 2N3716)
40
120
50
150
VCE=2.0V, IC=3.0A (2N3713, 2N3714)
VCE=2.0V, IC=3.0A (2N3715, 2N3716)
15
VCE=10V, IC=0.5A, f=1.0MHz
IC=5.0A, IB1=IB2=0.5A
4.0
IC=5.0A, IB1=IB2=0.5A
IC=5.0A, IB1=IB2=0.5A
30
MHz
0.4
μs
0.3
μs
0.4
μs
R2 (18-June 2013)
2N3713
2N3714
2N3715
2N3716
SILICON
NPN TRANSISTORS
TO-3 CASE - MECHANICAL OUTLINE
R2
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
R2 (18-June 2013)
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REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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